The activation energy dependence on the electric field in UTBOX SOI FBRAM devices

Author

Nicoletti, T. ; Santos, S.D. ; Sasaki, K.R.A. ; Martino, Joao Antonio ; Aoulaiche, Marc ; Simoen, Eddy ; Claeys, Cor

Author_Institution

LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil

fYear

2013

fDate

7-10 Oct. 2013

Firstpage

1

Lastpage

2

Abstract

The dependence of the activation energy on the electric field is investigated in extensionless (underlap) UTBOX FDSOI applied as a single transistor floating body RAM. It was found that with the same gate stack it is possible to extract two different activation energies when the electric field in the hold condition is different. Higher barrier lowering induced by elevated electric field implies in higher energy trap level. The dominant mechanism behind this dependence is identified and attributed to Poole-Frenkel effect.

Keywords

Poole-Frenkel effect; elemental semiconductors; random-access storage; silicon; silicon-on-insulator; transistors; Poole-Frenkel effect; UTBOX SOI FBRAM device; activation energy extraction dependence; electric field; energy trap level; extensionless UTBOX FDSOI; single transistor floating body RAM; Electric fields; Logic gates; Plasma temperature; Random access memory; Silicon; Temperature sensors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/S3S.2013.6716570

Filename

6716570