DocumentCode :
675599
Title :
Charge trapping type FinFET flash memory with Al2O3 blocking layer
Author :
Liu, Y.X. ; Nabatame, T. ; Matsukawa, T. ; Endo, Kazuhiro ; O´uchi, S. ; Tsukada, J. ; Yamauchi, Hiroyuki ; Ishikawa, Yozo ; Mizubayashi, W. ; Morita, Yusuke ; Migita, S. ; Ota, Hiroyuki ; Chikyow, T. ; Masahara, M.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2013
fDate :
7-10 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, as a further study, we fabricated charge trapping type SOI-FinFET flash memories with different blocking layers of Al2O3 and SiO2, and comparatively investigate their electrical characteristics.
Keywords :
MOSFET; alumina; flash memories; silicon compounds; Al2O3; Al2O3 blocking layer; SiO2; SiO2 blocking layer; charge trapping type FinFET flash memory; electrical characteristics; Aluminum oxide; Charge carrier processes; FinFETs; Flash memories; Logic gates; MONOS devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/S3S.2013.6716572
Filename :
6716572
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=675599
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