• DocumentCode
    675599
  • Title

    Charge trapping type FinFET flash memory with Al2O3 blocking layer

  • Author

    Liu, Y.X. ; Nabatame, T. ; Matsukawa, T. ; Endo, Kazuhiro ; O´uchi, S. ; Tsukada, J. ; Yamauchi, Hiroyuki ; Ishikawa, Yozo ; Mizubayashi, W. ; Morita, Yusuke ; Migita, S. ; Ota, Hiroyuki ; Chikyow, T. ; Masahara, M.

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2013
  • fDate
    7-10 Oct. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, as a further study, we fabricated charge trapping type SOI-FinFET flash memories with different blocking layers of Al2O3 and SiO2, and comparatively investigate their electrical characteristics.
  • Keywords
    MOSFET; alumina; flash memories; silicon compounds; Al2O3; Al2O3 blocking layer; SiO2; SiO2 blocking layer; charge trapping type FinFET flash memory; electrical characteristics; Aluminum oxide; Charge carrier processes; FinFETs; Flash memories; Logic gates; MONOS devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2013.6716572
  • Filename
    6716572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=675599