DocumentCode :
67561
Title :
Improved Quantum Efficiency in Green InGaN Light-Emitting Diodes With InGaN Barriers
Author :
Chang, Jih-Yuan ; Chang, Yi-An ; Chen, Fang-Ming ; Kuo, Yih-Ting ; Kuo, Yen-Kuang
Author_Institution :
Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan
Volume :
25
Issue :
1
fYear :
2013
fDate :
Jan.1, 2013
Firstpage :
55
Lastpage :
58
Abstract :
The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In0.2Ga0.8N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; Auger recombination; LED; barrier material; carrier distribution; electron-hole spatial overlap; green light-emitting diodes; quantum efficiency; radiative recombination efficiency; Current density; Gallium nitride; Green products; Light emitting diodes; Materials; Radiative recombination; InGaN; light-emitting diodes (LEDs); multiple quantum well;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2227700
Filename :
6353514
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=67561
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