Crosstalk analysis of through silicon vias with low pitch-to-diameter ratio in 3D-IC

Author

Sheng Liu ; Jianping Zhu ; Yongrong Shi ; Xing Hu ; Wanchun Tang

Author_Institution

Sch. of Electron. & Opt. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China

Volume

02

fYear

2013

fDate

23-25 Oct. 2013

Firstpage

1001

Lastpage

1004

Abstract

An equivalent circuit model for low pitch-to-diameter ratio (P/D) through silicon via (TSV) in three-dimensional integrated circuit (3-D IC) is proposed in this paper. The shunt admittance of this model is calculated based on the method of moments which can accurately capture the proximity effect for both a TSV pair and TSV array. The metal-oxide-semiconductor (MOS) capacitance of TSV is also considered. With this model, the crosstalk of TSV array can be fully analyzed regardless of the pitch. The results by this model agree well with those by the electromagnetic simulations up to 40GHz.

Keywords

MOS capacitors; crosstalk; equivalent circuits; method of moments; three-dimensional integrated circuits; 3D-IC; MOS capacitance; TSV array; TSV pair; crosstalk analysis; electromagnetic simulations; equivalent circuit model; low pitch-to-diameter ratio; metal-oxide-semiconductor capacitance; method of moments; proximity effect; shunt admittance; through silicon vias; Arrays; Capacitance; Crosstalk; Integrated circuit modeling; Silicon; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas & Propagation (ISAP), 2013 Proceedings of the International Symposium on

Conference_Location

Nanjing

Print_ISBN

978-7-5641-4279-7

Type

conf

Filename

6717661