Title :
Artificial magnetic conductor based on InP technology
Author :
Yan Jun Dai ; Guo Qing Luo ; Ya Ping Liang
Author_Institution :
Key Lab. of RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
Artificial magnetic conductor (AMC) is a kind of periodic structures and it introduces a zero degrees reflection phase shift to incident wave. In order to reduce size of artificial magnetic conductor and increase their working bandwidth, InP process is used to design AMC in this paper. InP material has advantages of large forbidden bandwidth, high electron mobility, negative resistance effect etc. AMC based on InP process has been analyzed and results show that the proposed AMC has a good bandwidth compared with that of CMOS process for its smooth reflection phase variation and its whole size is greatly reduced.
Keywords :
CMOS analogue integrated circuits; III-V semiconductors; electromagnetic wave reflection; indium compounds; microwave metamaterials; periodic structures; CMOS process; artificial magnetic conductor; high-electron mobility; incident wave; indium phosphorus process; indium phosphorus technology; negative resistance effect; periodic structures; reflection phase variation; working bandwidth; zero-degree reflection phase shift; Bandwidth; CMOS integrated circuits; Conductors; Indium phosphide; Magnetoacoustic effects; Reflection coefficient; Shape; AMC; InP; reflection phase;
Conference_Titel :
Antennas & Propagation (ISAP), 2013 Proceedings of the International Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-7-5641-4279-7
