Modelling and analysis of island region in Single Electron Transistor with nanotube and oxide layers

Single Electron Transistor (SET) works on the phenomenon of electron tunnelling from source to drain through the Island region called as Coulomb blockade. This can be achieved by placing a material of different energy band gap in the island region so that the electrons gets accumulated at the island and the electrons with higher energy able to pass through the island and reaches the drain region. Normally 0D, 1D, 2D nanostructures have varying band gaps due to the electron confinement. In our approach two different Island regions have been achieved by placing CNT and TiO2 between the source and the drain regions as two different approaches. In this paper the performances of the SET with two different Island regions have been analyzed using Material Studio software package.