Analysis of conduction and switching losses in two level inverter for low power applications

Increasing demand for electrical energy emphasizes the need of efficient utilization of energy i.e. reduction in losses. Due to limitations of Si material, existing Si devices are suffering in terms of losses specially when operated at high switching frequency. This paper presents reduction of switching losses with use of SiC diode, considering three phase two level inverters. Novel approaches for analyzing the switching and conduction losses of Si and SiC diode for two level inverter are presented and corresponding results are listed.