Title :
Study of GaN radiation sensor after in-core neutron irradiation
Author :
Mulligan, Padhraic ; Jie Qiu ; Jinghui Wang ; Cao, Lei R.
Author_Institution :
Dept. of Mech. & Aerosp. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 1016 n/cm2. The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors´ performance showed insignificant changes after in-core neutron irradiation at 1015 n/cm2.
Keywords :
Schottky diodes; alpha-particle detection; alpha-particle spectra; neutron detection; semiconductor counters; GaN Schottky diode radiation detectors; alpha particle spectrum; capacitance-voltage relation; charge collection efficiency; current-voltage relation; detector performance; freestanding GaN wafer; in-core neutron irradiation; neutron fluences; Capacitance-voltage characteristics; Detectors; Gallium nitride; Neutrons; Radiation detectors; Radiation effects; Schottky diodes; Gallium nitride; alpha detector; high radiation field;
Conference_Titel :
Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA), 2013 3rd International Conference on
Conference_Location :
Marseille
Print_ISBN :
978-1-4799-1046-5
DOI :
10.1109/ANIMMA.2013.6727935
