DocumentCode :
67919
Title :
A Novel SU8 Polymer Anchored Low Temperature HWCVD Nitride Polysilicon Piezoresitive Cantilever
Author :
Patkar, R.S. ; Apte, P.R. ; Rao, V.R.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
Volume :
23
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
1359
Lastpage :
1365
Abstract :
In this paper, we present a novel approach for fabricating piezoresistive silicon nitride cantilevers using polymer as an anchor. In our approach, the silicon nitride structural layers, as well as the polycrystalline silicon piezoresistive layer, are deposited by a low temperature hot-wire chemical vapor deposition process. The novelty of this process is that the silicon wafer is not consumed and is reusable, and the process also allows use of alternate materials for cantilever fabrication in place of silicon substrate. The fabricated silicon nitride cantilevers are characterized for their mechanical and electromechanical behavior.
Keywords :
anchors; cantilevers; chemical vapour deposition; micromechanical devices; piezoresistive devices; polymers; SU8 polymer anchor; cantilever fabrication; hot- wire chemical vapor deposition process; low temperature HWCVD; nitride polysilicon piezoresistive cantilever; piezoresistive silicon nitride cantilevers; polycrystalline silicon piezoresistive layer; silicon nitride structural layers; silicon wafer; Piezoresistance; Piezoresistive devices; Polymers; Silicon nitride; Substrates; Young´s modulus; MEMS; microcantilever; piezoresistance; polymer anchor; polymer anchor.; silicon nitride;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2014.2313176
Filename :
6784305
Link To Document :
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