DocumentCode :
680338
Title :
III–V semiconductor nanowires for optoelectronic device applications
Author :
Mokkapati, S. ; Nian Jiang ; Saxena, D. ; Parkinson, P. ; Qiang Gao ; Hark Hoe Tan ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2013
fDate :
13-15 Dec. 2013
Firstpage :
1
Lastpage :
3
Abstract :
III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnrr), where τnr is the non-radiative lifetime and τr is the radiative lifetime of minority carriers in the nanowires is necessary for device applications. Due to the large surface area to volume ratio in the nanowires, non-radiative recombination associated with surface states often results in low quantum efficiency. The quantum efficiency of the nanowires can be increased either by increasing τnr or by reducing τr. We present experimental results on these two different approaches to increase the quantum efficiency of semiconductor nanowires.
Keywords :
III-V semiconductors; carrier lifetime; minority carriers; nanophotonics; nanowires; photoluminescence; radiative lifetimes; surface recombination; surface states; III-V semiconductor nanowires; minority carriers; nonradiative lifetime; nonradiative recombination; one dimensional geometry; optoelectronic device applications; quantum efficiency; surface area-volume ratio; surface states; Charge carrier lifetime; Gallium arsenide; Nanoparticles; Nanowires; Optoelectronic devices; Plasmons; Radiative recombination; GaAs nanowires; III–V semiconductor nanowires; core-shell-cap nanowires; plasmonic nanowires; quantum efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Photonics (ICMAP), 2013 International Conference on
Conference_Location :
Dhanbad
Print_ISBN :
978-1-4799-2176-8
Type :
conf
DOI :
10.1109/ICMAP.2013.6733456
Filename :
6733456
Link To Document :
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