Title :
Fabrication and characterization of InGaN/GaN MQWs blue light-emitting diodes on sapphire substrate
Author :
Singh, Karam ; Chauhan, Anamika ; Joshi, S. ; Sharma, Ashok ; Kumar, Pranaw ; Singh, Sushil ; Prajapati, P. ; Kushwaha, Brijesh Kumar ; Johri, S. ; Dhanavantri, C. ; Rana, M.M. ; Chouhan, Meenakshi
Author_Institution :
Optoelectron. Devices Group, Central Electron. Eng. Res. Inst., Pilani, India
Abstract :
In this paper, we report successful fabrication and characterization of InGaN/GaN MQWs based blue LEDs on c-plane sapphire substrate. The epitaxial material used in the fabrication of blue LEDs was grown by metal-organic-chemical vapor deposition (MOCVD) system. The threshold voltage (Vth) of fabricated InGaN/GaN MQWs blue LED on c-plane sapphire substrate was ~ 3.1 V.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; optical fabrication; quantum well devices; semiconductor epitaxial layers; wide band gap semiconductors; Al2O3; InGaN-GaN; InGaN/GaN MQW blue light-emitting diodes; MOCVD; c-plane sapphire substrate; epitaxial material; fabrication; metal-organic-chemical vapor deposition system; threshold voltage; Fabrication; Gallium nitride; Light emitting diodes; Quantum well devices; Substrates; Threshold voltage; Electron Beam Evaporation; Multi-Quantum Wells; Reactive Ion Etching; Transparent Conducting Layer;
Conference_Titel :
Microwave and Photonics (ICMAP), 2013 International Conference on
Conference_Location :
Dhanbad
Print_ISBN :
978-1-4799-2176-8
DOI :
10.1109/ICMAP.2013.6733523
