Title :
Study of gain characteristics of GaAs/GaAlAs self assembled quantum dots
Author :
Kumar, Dinesh ; Negi, C.M.S. ; Kumar, Jayant ; Gupta, Suneet K.
Author_Institution :
Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India
Abstract :
The effect of size and shape anisotropy on the gain characteristics of strain free GaAs/AlGaAs quantum dots is theoretically investigated. QD is modelled by anisotropic parabolic potential along x-y plane. Luttinger Hamiltonian has been numerically diagonalized over a wider range of shape anisotropy and size to obtain the eigenvalues and eigenvectors. The dipole matrix elements are obtained for interband transitions and gain spectra are calculated.
Keywords :
III-V semiconductors; aluminium compounds; eigenvalues and eigenfunctions; gallium arsenide; numerical analysis; self-assembly; semiconductor quantum dots; GaAs-GaAlAs; anisotropic parabolic potential; dipole matrix elements; eigenvalues; eigenvectors; gain characteristics; gain spectra; interband transitions; numerically diagonalized Luttinger Hamiltonian; self assembled quantum dots; shape anisotropy; size anisotropy; strain free quantum dots; Anisotropic magnetoresistance; Gallium arsenide; Geometrical optics; Optical polarization; Quantum dot lasers; Quantum dots; Shape; Self-assembled quantum dot; gain spectra; transition energy;
Conference_Titel :
Microwave and Photonics (ICMAP), 2013 International Conference on
Conference_Location :
Dhanbad
Print_ISBN :
978-1-4799-2176-8
DOI :
10.1109/ICMAP.2013.6733542
