Study of gain characteristics of GaAs/GaAlAs self assembled quantum dots

Author

Kumar, Dinesh ; Negi, C.M.S. ; Kumar, Jayant ; Gupta, Suneet K.

Author_Institution

Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India

fYear

2013

fDate

13-15 Dec. 2013

Firstpage

1

Lastpage

4

Abstract

The effect of size and shape anisotropy on the gain characteristics of strain free GaAs/AlGaAs quantum dots is theoretically investigated. QD is modelled by anisotropic parabolic potential along x-y plane. Luttinger Hamiltonian has been numerically diagonalized over a wider range of shape anisotropy and size to obtain the eigenvalues and eigenvectors. The dipole matrix elements are obtained for interband transitions and gain spectra are calculated.

Keywords

III-V semiconductors; aluminium compounds; eigenvalues and eigenfunctions; gallium arsenide; numerical analysis; self-assembly; semiconductor quantum dots; GaAs-GaAlAs; anisotropic parabolic potential; dipole matrix elements; eigenvalues; eigenvectors; gain characteristics; gain spectra; interband transitions; numerically diagonalized Luttinger Hamiltonian; self assembled quantum dots; shape anisotropy; size anisotropy; strain free quantum dots; Anisotropic magnetoresistance; Gallium arsenide; Geometrical optics; Optical polarization; Quantum dot lasers; Quantum dots; Shape; Self-assembled quantum dot; gain spectra; transition energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Photonics (ICMAP), 2013 International Conference on

Conference_Location

Dhanbad

Print_ISBN

978-1-4799-2176-8

Type

conf

DOI

10.1109/ICMAP.2013.6733542

Filename

6733542