• DocumentCode
    680653
  • Title

    Field plate termination for high voltage diamond Schottky diode

  • Author

    Arbess, Houssam ; Isoird, K.

  • Author_Institution
    LAAS, Univ. de Toulouse, Toulouse, France
  • fYear
    2013
  • fDate
    15-18 Dec. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    New field plate architecture is applied to pseudo vertical diamond Schottky diode. New topology structure has been proposed and simulated using Sentaurus TCAD simulation in order to minimize the maximum electric field in the dielectric at high voltage operation. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning Emax in the dielectric, we obtained high decreasing of the maximum electric field following the policy of pressure distribution.
  • Keywords
    Schottky diodes; diamond; electric fields; Sentaurus TCAD simulation; field plate architecture; field plate termination; high voltage diamond Schottky diode; maximum electric field; pressure distribution policy; pseudovertical diamond Schottky diode; temperature 700 K; topology structure; voltage 1632 V to 2141 V; Aluminum oxide; Diamonds; Dielectrics; Electric fields; Schottky diodes; Silicon; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2013 25th International Conference on
  • Conference_Location
    Beirut
  • Print_ISBN
    978-1-4799-3569-7
  • Type

    conf

  • DOI
    10.1109/ICM.2013.6735017
  • Filename
    6735017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=680653