Field plate termination for high voltage diamond Schottky diode

New field plate architecture is applied to pseudo vertical diamond Schottky diode. New topology structure has been proposed and simulated using Sentaurus TCAD simulation in order to minimize the maximum electric field in the dielectric at high voltage operation. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning E_max in the dielectric, we obtained high decreasing of the maximum electric field following the policy of pressure distribution.