DocumentCode :
682453
Title :
An efficient mechanism to simulate DC characteristics of GaAs MESFETs using swarm optimization
Author :
Memon, Q.D. ; Ahmed, M.M. ; Memon, N.M. ; Rafique, U.
fYear :
2013
fDate :
9-10 Dec. 2013
Firstpage :
1
Lastpage :
5
Abstract :
A five parameters I-V model has been presented to predict I-V characteristics of submicron GaAs MESFETs. The proposed model guaranteed convergence in an optimization process and does not trap in a local minimum which is frequently observed in Dobes model. Comparison between the Dobes and the proposed model has been carried out by developing an optimization code based on particle swarm optimization. By evaluating RMS errors as a function of Vgs and Vds it has been shown that the proposed model is efficient both in time and accuracy compared to the Dobes model and it should be a useful tool for the designing of future integrated circuits with sub-micron gate length GaAs MESFETs.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; particle swarm optimisation; semiconductor device models; DC characteristics; Dobes model; GaAs; MESFET; RMS errors; integrated circuits design; particle swarm optimization; Equations; Gallium arsenide; Integrated circuit modeling; MESFETs; Mathematical model; Optimization; Particle swarm optimization; DC Simulation; GaAs MESFETs; Particle Swarm Optimization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Technologies (ICET), 2013 IEEE 9th International Conference on
Conference_Location :
Islamabad
Print_ISBN :
978-1-4799-3456-0
Type :
conf
DOI :
10.1109/ICET.2013.6743542
Filename :
6743542
Link To Document :
بازگشت