A New Volume Integral Formulation for Broadband 3-D Circuit Extraction in Inhomogeneous Materials With and Without External Electromagnetic Fields

A new first-principles-based volume integral equation (VIE) formulation is developed for the broadband full-wave extraction of general 3-D circuits, containing arbitrarily shaped lossy conductors with inhomogeneous dielectrics. The proposed formulation accentuates all the advantages of the VIE formulation traditionally developed for solving wave-related problems, while allowing for the extraction of multiport circuit parameters such as impedance Z-, admittance Y-, and scattering S-parameters at ports located anywhere in the physical structure of a circuit. Its first-principles-based formulation without circuit-based simplifications and approximations can also be utilized to analyze the performance of a circuit in adverse ambient conditions, such as the exposure to strong external electromagnetic fields. In addition, the magneto-quasi-static and electro-magneto-quasi-static counterparts of the proposed full-wave formulation are also given for low-frequency applications. Numerical experiments have validated the accuracy and capability of the proposed new VIE formulation.