DocumentCode
682853
Title
Novel recombination lifetime mapping technique through Kelvin probe studies
Author
Alderman, Nick ; Danos, Lefteris ; Grossel, Martin ; Markvart, Tom
Author_Institution
Solar Energy Lab., Univ. of Southampton, Southampton, UK
fYear
2013
fDate
16-21 June 2013
Abstract
The Kelvin probe is a very powerful and versatile tool, allowing the extraction of data such as diffusion length, surface photovoltage and impurity concentrations. This paper investigates the extraction of surface recombination velocities (and assuming a bulk lifetime, the surface recombination lifetime) from the I-V type dependence of the sample. By using an X-Y stage, the surface recombination lifetime can be imaged for entire wafers, instead of obtaining an average value of lifetime similar to that obtained from the Sinton WCT-120 lifetime tool. This is useful in determining where further improvements in the surface passivation can be obtained, by observing problem areas in the passivation layer.
Keywords
carrier lifetime; passivation; surface recombination; I-V type dependence; Kelvin probe studies; Sinton WCT-120 lifetime tool; X-Y stage; data extraction; diffusion length; impurity concentrations; surface passivation; surface photovoltage; surface recombination lifetime mapping technique; surface recombination velocities; Kelvin; Passivation; Probes; Radiative recombination; Semiconductor device measurement; Silicon; Kelvin probe; Recombination lifetime; lifetime mapping; surface passivation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744132
Filename
6744132
Link To Document