• DocumentCode
    682853
  • Title

    Novel recombination lifetime mapping technique through Kelvin probe studies

  • Author

    Alderman, Nick ; Danos, Lefteris ; Grossel, Martin ; Markvart, Tom

  • Author_Institution
    Solar Energy Lab., Univ. of Southampton, Southampton, UK
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Abstract
    The Kelvin probe is a very powerful and versatile tool, allowing the extraction of data such as diffusion length, surface photovoltage and impurity concentrations. This paper investigates the extraction of surface recombination velocities (and assuming a bulk lifetime, the surface recombination lifetime) from the I-V type dependence of the sample. By using an X-Y stage, the surface recombination lifetime can be imaged for entire wafers, instead of obtaining an average value of lifetime similar to that obtained from the Sinton WCT-120 lifetime tool. This is useful in determining where further improvements in the surface passivation can be obtained, by observing problem areas in the passivation layer.
  • Keywords
    carrier lifetime; passivation; surface recombination; I-V type dependence; Kelvin probe studies; Sinton WCT-120 lifetime tool; X-Y stage; data extraction; diffusion length; impurity concentrations; surface passivation; surface photovoltage; surface recombination lifetime mapping technique; surface recombination velocities; Kelvin; Passivation; Probes; Radiative recombination; Semiconductor device measurement; Silicon; Kelvin probe; Recombination lifetime; lifetime mapping; surface passivation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744132
  • Filename
    6744132