• DocumentCode
    682859
  • Title

    CdSe nanowire solar cells

  • Author

    Caselli, Derek ; Cun-Zheng Ning

  • Author_Institution
    Dept. of Electr., Comput., & Energy Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Abstract
    Cadmium selenide nanowire solar cells with copper-doped zinc telluride window layers were designed and fabricated. I-V characterization was conducted in the dark and under illumination by a halogen lamp. Open-circuit voltages as high as 188 mV were obtained, though short-circuit currents were on the order of nA. The low currents are attributed to the small fraction of nanowires which protrude from the isolation layer and contribute to the device output. These devices also showed significant shunting, which is attributed to Cu migration through the ZnTe layer, as well as series resistance. The maximum open-circuit voltage of 188 mV was on the order of similar film-based cells in literature. Future applications in spectrum-splitting solar cells based on spatially composition-graded alloy nanowires in the CdxPb1-xSySe1-y materials system will be discussed.
  • Keywords
    II-VI semiconductors; cadmium compounds; copper; electric resistance; lamps; nanowires; semiconductor doping; short-circuit currents; solar cells; zinc compounds; CdSe-ZnTe:Cu; I-V characterization; cadmium selenide nanowire solar cell; copper-doped zinc telluride window layer; film-based cell; halogen lamp; isolation layer; open-circuit voltage; short-circuit current; voltage 188 mV; Annealing; Fabrication; Materials; Metals; Nanoscale devices; Photonic band gap; Photovoltaic cells; II-VI semiconductor materials; doping; heterojunctions; nanowires; photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744144
  • Filename
    6744144