Title :
InGaAs quantum dot solar cells with high energygap matrix layers
Author :
Shoji, Yozo ; Okada, Yoshitaka
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
Abstract :
We have fabricated InGaAs/AlGaAs quantum dots solar cells with a high band offset energy between quantum dot and barrier layers in order to suppress thermal escape of electrons out of the quantum dot layers. The external quantum efficiency of quantum dots solar cell increases between 550 and 900 nm wavelength due to additive contributions from quantum dot layers inserted in the p-n structure. Further, we have clearly observed a photocurrent production by two-step photon absorption at room temperature due to suppression of thermal escape of electrons out of the QD layers. The additive photocurrent by two-step absorption was 0.242 mA/cm2, which is around 12.6 % of the total current density measured at AM 1.5 spectrum.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; indium compounds; photovoltaic cells; semiconductor quantum dots; solar cells; InGaAs-AlGaAs; additive photocurrent; barrier layers; high band offset energy; high energygap matrix layers; photocurrent production; pn structure; quantum dot layers; quantum dot solar cells; thermal electrons escape; two step photon absorption; Absorption; Indium gallium arsenide; Photoconductivity; Photonics; Photovoltaic cells; Production; Quantum dots; III-V semiconductor materials; photovoltaic cells; quantum dots;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744156