Title :
The effect of pulsewidth on preparing CuIn1−xGaxSe2 thin film via pulse laser deposition
Author :
Shih-Chen Chen ; Kaung-Hsiung Wu ; Fang-I Lai ; Kobayashi, Takehiko ; Hao-Chung Kuo
Author_Institution :
Dept. of Electrophys., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
We prepared CIGS thin films by pulsed laser deposition (PLD), the pulsewidth of the laser sources are nanosecond(ns) and femtosecond(fs), respectively. We compared their surface morphologies by scanning electron microscopy images. Following, we analyzed their crystal structure utilizing X-ray diffraction, and Raman spectroscopy. Finally, the ultrafast carrier dynamics measured by optical pump-optical probe (OPOP) system. The results of these measurements reveal the better chalcopyprite structure in fs PLD CIGS. And we obtained lower defect-related non-radiative recombination rate in fs PLD CIGS by using OPOP spectroscopy, reflecting a better quality with higher energy conversion efficiency of them.
Keywords :
Raman spectra; X-ray diffraction; copper compounds; crystal structure; gallium compounds; indium compounds; pulsed laser deposition; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; CuIn1-xGaxSe2; Raman spectroscopy; X-ray diffraction; chalcopyprite structure; crystal structure; defect-related nonradiative recombination; optical pump-optical probe system; pulse laser deposition; pulsewidth effect; scanning electron microscopy; surface morphology; thin film; ultrafast carrier dynamics; Films; Optical variables measurement; Photovoltaic cells; Pulsed laser deposition; Semiconductor device measurement; Spectroscopy; Ultrafast optics; charge carrier lifetime; photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744168
