DocumentCode :
682876
Title :
Nucleation, growth, and orientation analysis of quaternary-sputtered Cu(In, Ga)Se2
Author :
Myers, J.D. ; Frantz, J.A. ; Bekele, R.Y. ; Qadri, Syed B. ; Sanghera, J.S.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
fYear :
2013
fDate :
16-21 June 2013
Abstract :
Cu(In, Ga)Se2 films of various thicknesses were deposited from a single quaternary sputtering target and evaluated using x-ray diffraction and electron microscopy. Strong evidence of Volmer-Weber growth is observed, with the bare molybdenum bottom contact still observable after 600 seconds of growth and a nominal film thickness of ~100 nm. X-ray diffraction characterization reveals that the degree of preferred orientation increases with additional growth time, indicating film reorganization and preferential adherence of deposited species. Further, the degree of preferred orientation decreases with the age of the sputtering target, making this a possible technique to monitor the remaining target lifetime.
Keywords :
X-ray diffraction; copper compounds; electron microscopy; gallium compounds; indium compounds; nucleation; selenium compounds; semiconductor growth; semiconductor thin films; sputtering; Cu(In-Ga)Se2; electron microscopy; nucleation; orientation analysis; quaternary-sputtering; semiconductor growth; sputtering target; x-ray diffraction; Films; Microscopy; Rough surfaces; Sputtering; Surface morphology; Surface roughness; X-ray diffraction; scanning electron microscopy; semiconductor growth; sputtering; thin films; x-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744177
Filename :
6744177
Link To Document :
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