• DocumentCode
    682901
  • Title

    Single image concept for photoluminescence based emitter saturation current imaging using direct calibration by the QSS-μPCD method

  • Author

    Korsos, Ferenc ; Zsovar, Andras ; Lagowski, Jacek ; Wilson, M. ; Kiss, Zoltan ; Kovacs, Zsolt ; Nadudvari, Gyorgy

  • Author_Institution
    Semilab Co. Ltd., Budapest, Hungary
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1432
  • Lastpage
    1435
  • Abstract
    A photoluminescence imaging based technique is introduced which enables the measurement of an emitter saturation current image of a wafer with only a single PL image over an extended range of material parameters. The QSS-μPCD technique is used for recording an independent reference value for a direct J0e calibration. It is shown that for accurate results in an extended J0e and bulk lifetime range, an estimation of bulk lifetime is very useful. It is shown that from the QSS-μPCD Basore-Hansen plot this bulk lifetime value can be reliably estimated. Calculated lifetime related corrections are compared to experimental results showing good agreement. As a potential industrial in-line application, results from a 1D camera based PL setup are presented.
  • Keywords
    elemental semiconductors; photoluminescence; silicon; 1D camera; Basore-Hansen plot; QSS-μPCD; Si; bulk lifetime; direct calibration; inline application; photoluminescence-based emitter saturation current imaging; quasisteady-state photoconductance; single photoluminescence image; wafer; Cameras; Correlation; Photoluminescence; Photovoltaic systems; Silicon; charge carrier lifetime; inline; photoluminescence; saturation current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744413
  • Filename
    6744413