Title :
Modeling A-Si module ageing using the concept of environmental dose
Author :
Jiang Zhu ; Bliss, Martin ; Betts, Thomas R. ; Gottschalg, Ralph
Author_Institution :
Centre for Renewable Energy Syst. Technol. (CREST), Loughborough Univ., Loughborough, UK
Abstract :
This paper investigates ageing of a-Si devices using indoor controlled irradiance and temperature stresses testing. Device maximum power degradation is analyzed against the proposed environmental dose, which is derived from the microscopic model of defects generation and annealing of a-Si material. This dose model well describes the ageing behavior for the devices degraded at different conditions of irradiances from 130-500W/m2 and temperatures from 25-85°C. This, thus, enables the comparison study of device ageing under different environmental conditions and allows the attempt to correlate the outdoor environment to indoor performance.
Keywords :
ageing; amorphous semiconductors; elemental semiconductors; environmental degradation; semiconductor device models; silicon; Si; a-Si devices; a-Si material; ageing behavior; annealing; defects generation; device ageing; device maximum power degradation; environmental conditions; environmental dose; indoor controlled irradiance; indoor performance; microscopic model; outdoor environment; temperature 25 C to 85 C; temperature stresses testing; Aging; Annealing; Degradation; Mathematical model; Stress; Temperature; Temperature measurement; Arrhenius; ageing; amorphous silicon; environmental dose; modeling; reliability;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744456
