Intermediate band solar energy conversion in ZnTeO

Author

Phillips, Jacob ; Teran, Alan ; Chihyu Chen ; Antolin, E. ; Ramiro, I. ; Lopez, Enrique ; Hernandez, E. ; Artacho, I. ; Tablero, C. ; Marti, A. ; Luque, Antonio

Author_Institution

Dept. of Electr. Eng. & Comp. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

1640

Lastpage

1643

Abstract

Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe.

Keywords

III-V semiconductors; gallium arsenide; solar cells; tellurium compounds; zinc compounds; GaAs; GaSb; ZnTeO; conduction band edge; emitter layers; intermediate band solar energy conversion in ZnTeO; intermediate electronic states; quantum efficiency; solar cells; window layers; Gallium arsenide; Heterojunctions; Lattices; Photovoltaic cells; Substrates; II-VI semiconductor materials; Photovoltaic cells; heterojunctions; oxygen; photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744459

Filename

6744459