DocumentCode :
682965
Title :
Rear side dielectrics choices in PERC solar cells
Author :
Zhengyue Xia ; Yantao Gao ; Longzhong Tao ; Xiaoqiang Li ; Zhuojian Yang ; Sidhu, Rubin ; Jingbing Dong ; Hongqiao Qiao ; Kuilong Teng ; Bin Zhang ; Guoqiang Xing
Author_Institution :
Hareon Solar Technol. Co., Ltd., Jiangyin, China
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1781
Lastpage :
1783
Abstract :
Characterization of SiOx and Al2O3 passivation film and the effect on PERC cells performance were studied in details. Due to >2×1011 cm-2 positive fixed charge in SiOx film, inversion layer is formed on PERC rear side, so that pseudo-FF of cells decreases because of large J02. Additionally, it leads to bad low-light performance because the rear surface recombination velocity (RSRV) increases with the injection level decrease under inversion status. On the contrary, Al2O3 film with >2×1012 cm-2 negative fixed charge show total different properties and excellent passivation on PERC cells. Deposited by Al2O3/SiNx stack film, PERC cells achieved to 19.8% batch average efficiency. With selective emitter technology, the average efficiency can increase up to 20.0%. Additionally, the low light output and temperature coefficient of PERC cell are also improved comparing to conventional Al-BSF cell. PERC module made by 60 cells shows power output larger than 280W.
Keywords :
alumina; passivation; silicon compounds; solar cells; Al2O3; BSF cell; PERC solar cells; RSRV; SiOx; cells performance; efficiency 19.8 percent; injection level; inversion layer; low-light performance; passivation film; pseudo-FF; rear side dielectrics choices; rear surface recombination velocity; selective emitter technology; temperature coefficient; Aluminum oxide; Dielectrics; Films; Passivation; Photovoltaic cells; Silicon; Spontaneous emission; PERC; low-light performance; passivation; selective emitter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744488
Filename :
6744488
Link To Document :
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