DocumentCode
683103
Title
Numerical study of graded bandgap solar cells
Author
Ming-Hsuan Tan ; Hung-Ruei Tseng ; Yen-Hua Lo ; Shun-Chieh Hsu ; Che-Pin Tsai ; Chien-Chung Lin
Author_Institution
Inst. of Photonic Syst., Nat. Chiao Tung Univ., Tainan, Taiwan
fYear
2013
fDate
16-21 June 2013
Firstpage
1914
Lastpage
1918
Abstract
A novel idea of graded band gap design in intrinsic-layer is proposed and studied numerically. We built our device model by using Matlab® coding and commercial software APSYS®. The device performance is calculated by continuity equations, and effective band gap model. The final calculation shows the optimal efficiency enhancement is about 1.32 and 2.18 times of the non-grading band gap device in GaAs and GaN system, respectively.
Keywords
energy gap; solar cells; transport processes; AlAs-GaAs; GaN-InN; Matlab coding; continuity equation; device performance; graded band gap design; graded bandgap solar cells; intrinsic layer; optimal efficiency enhancement; Gallium arsenide; Gallium nitride; Mathematical model; Photonic band gap; Photovoltaic cells; Radiative recombination; APSYS®; MATLAB®; graded band gap; photovoltaic cells; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744843
Filename
6744843
Link To Document