DocumentCode :
683110
Title :
Recombination stability in polycrystalline Cu2ZnSnSe4 thin films
Author :
Buffiere, Marie ; Brammertz, Guy ; El Mel, Abdel-Aziz ; Lenaers, Nick ; Yi Ren ; Zaghi, Armin E. ; Mols, Y. ; Koeble, Christine ; Vleugels, Jef ; Meuris, Marc ; Poortmans, Jozef
Author_Institution :
imec - partner of Solliance, Heverlee, Belgium
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1941
Lastpage :
1944
Abstract :
Time-resolved photoluminescence analysis shows that as-grown Cu2ZnSnSe4 (CZTSe) thin films degrade when they are exposed to air. The analysis of the films prior to degradation reveals relatively long carrier lifetimes. The increase of the recombination rates significantly affects the performance of the related solar cells. Among all the chemical treatments tested to recover the lifetime of the carrier after air exposure, the KCN etching seems to be the most efficient.
Keywords :
carrier lifetime; copper compounds; etching; minority carriers; photoluminescence; semiconductor materials; semiconductor thin films; solar cells; time resolved spectra; tin compounds; zinc compounds; Cu2ZnSnSe4; carrier lifetimes; chemical treatments; degradation; etching; recombination rates; recombination stability; solar cells; thin films; time-resolved photoluminescence analysis; Charge carrier lifetime; Chemicals; Degradation; Photovoltaic cells; Pollution measurement; Surface contamination; Surface treatment; CZTSe; charge carrier lifetime; solar cells; surface properties; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744850
Filename :
6744850
Link To Document :
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