Investigation of the CIGS thin film solar cells with post-selenized absorbers deposited by sputtering from a single quaternary target using electrical characterization methods

The goal of this study is to understand the role of selenium on the quaternary-sputtered CIGS films. Based on the CIGS thin films deposited by sputtering from a single quaternary target, we performed a post-selenization treatments in order to improve electrical properties of the CIGS devices. After the devices were completed, we first conducted current-voltage measurements to collect basic device output parameters, followed by capacitance-voltage measurement, and admittance measurements to gather defect-related information. With the help of the above methods, we suggest that selenium incorporation can possibly play the role of neutralizing selenium vacancies and selenium-related defects near the junction interface.