Improved the current matching of the middle-cell current-limited triple-junction GaAs/Ge solar cells after epitaxial grown using matrix profile TiO2 layer and indium nanoparticles plasmonics

The current matching of the middle-cell current-limited triple-junction GaAs/Ge solar-cells after-epitaxial-growth was improved using the matrix-profile TiO₂ layer and indium-nanoparticles plasmonics. The optical reflectance, short-circuit current, conversion efficiency and external quantum efficiency are used to characterize the effects of the matrix-profile TiO₂ layer and indium-nanoparticles plasmonics on the performances of solar cells. The cell with indium-nanoparticles deposited on the combined layers of a 10-nm-thick TiO₂ and a 30-nm-thick TiO₂ of 60% coverage shown the improving of current matching in middle-cell that increasing in conversion efficiency by 8.36% and short-circuit current of 12.91% are obtained, compared to the bare solar cells.