Advanced tunneling models for solar cell applications

This paper studies the potential of wide bandgap tunnel junctions such as AlGaAs/GaAs and GaAs/GaAs configurations for multi - junction solar cells. Simulations were performed to study the dominant physical mechanisms in tunnel junctions such as band to band tunneling and trap assisted tunneling. 1-D Drift Diffusion simulations were performed to determine the different regions in the I-V characteristics, namely, the tunneling current, excess current and classical diffusion current. We outline the implementation of local and non-local tunneling models to understand the nature of peak current. The variation of peak voltage is examined with the addition of band gap narrowing and different effective masses.