Induced junction III-nitride solar cells for wide band gap solar cells: Modeling charge transport and band bending in polarized material

III-N alloys of aluminum nitride, gallium nitride, and indium nitride are of high interest for solar cells as they span the majority of the solar spectrum from 6.2eV to 0.7eV. There are however challenges in creating conventional cells from these materials. Issues include an inability to produce high quality p-type material and polarization effects that block carrier transport in standard heterojunctions. We propose using an induced junction, a form of heterojunction, to create band bending and thus an effective p-n junction solely within n-type material. In this paper, we discuss theoretical equilibrium, transport, generation and recombination mechanisms within a III-N induced junction device. Recent experimental work with III-N material and device architectures will be added to help the model´s accuracy.