Title :
Strain balanced double quantum well tunnel junctions
Author :
Yakes, Michael K. ; Lumb, Matthew P. ; Bailey, Christopher G. ; Gonzalez, M. ; Walters, R.J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Quantum well tunnel junctions have been shown to improve the performance of tunnel junctions within a concentrator solar cell with low absorption loss. In this work, we have demonstrated a strain balanced quantum well which may be used to incorporate materials within the tunnel junction which have more desirable bandgaps without any degradation in material properties. Our strained InAlAs/InGaAs QWTJ strain balanced to an InP substrate shows dramatically improved performance improvement over the baseline device in peak tunneling current and a 45,000x improvement in differential resistance.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; indium compounds; semiconductor quantum wells; tunnelling; InAlAs-InGaAs; InP; InP substrate; absorption loss; bandgaps; degradation; differential resistance; strain balanced double quantum well tunnel junctions; tunneling current; Absorption; Junctions; Lattices; Materials; Photonic band gap; Photovoltaic cells; Strain; III-V multijunction solar cells; quantum wells; strain balancing; tunnel junction;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744899
