Radial junction nanopillar arrays textured n-type silicon solar cells

We report the radial p-n junction nanopillar arrays textured n-type silicon solar cells, passivated by ALD deposited Al₂O₃. Low cost solution processible metal assisted chemical etching (MACE) and spin on dopant (SOD) techniques were used for the fabrication of proposed solar cells. The nanopillar arrays textured surface exhibits the excellent broadband omnidirectional antireflection properties, leading to AM1.5G spectrum weighted reflectivity as low as 4.37%. Despite having the high surface to volume ratio of the nanopillar arrays textured surface, we observed an open circuit voltage (V_OC) and the short circuit current density (J_SC) as high as 572mV and 29.9mA/cm² respectively, which leads to the power conversion efficiency (PCE) in excess of 11.30%, for the optimized structure of the solar cells described herein. External quantum efficiency (EQE) measurements conforms the photocurrent enhancement contributed by the enhanced optical absorption in the optimized nanopillar arrays textured surface.