Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

Author

Renteria, Emma J. ; Ahirwar, Pankaj ; Clark, Stephen P. R. ; Romero, Orlando S. ; Addamane, Sadhvikas ; Hains, Chris P. ; Rotter, Tom J. ; Dawson, L.R. ; Lavrova, Olga ; Lester, L.F. ; Balakrishnan, Ganesh

Author_Institution

Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

2459

Lastpage

2461

Abstract

We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90° interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy.

Keywords

III-V semiconductors; X-ray diffraction; atomic force microscopy; dislocation arrays; etching; gallium compounds; membranes; semiconductor epitaxial layers; semiconductor growth; AFM; GaAs; GaAs substrates; GaSb; GaSb epilayers; GaSb-GaAs interface; X-ray diffraction; XRD; atomic force microscopy; crystal quality; etch stop process; interfacial misfit dislocation arrays; large-area GaSb membrane characterization; large-area GaSb membrane isolation; substrate removal techniques; surface quality; Epitaxial growth; Gallium arsenide; Rough surfaces; Substrates; Surface morphology; Surface roughness; Surface treatment; III-V semiconductor materials; semiconductor epitaxial layers; semiconductor growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744973

Filename

6744973