GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells

Author

Schmieder, Kenneth J. ; Gerger, Andrew ; Pulwin, Ziggy ; Li Wang ; Diaz, M. ; Curtin, Michael ; Ebert, C. ; Lochtefeld, Anthony ; Opila, Robert L. ; Barnett, Allen

Author_Institution

Dept. of Electr. Eng., Univ. of Delaware, Newark, DE, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

2462

Lastpage

2465

Abstract

GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer layer. Here, single-junction p+/n GaAsP and tandem n+/p GaAsP/SiGe solar cells are reported with an interest in improving efficiency by evaluation of the III-V device passivation layers and pathways to their optimization. Solar cells with varying window thicknesses are reported for both structures and assist in directing focus of future research. The GaAsP/SiGe on Si tandem solar cell demonstrates a result towards AM1.5G 20.8% AR-corrected efficiency.

Keywords

CVD coatings; Ge-Si alloys; III-V semiconductors; gallium compounds; passivation; silicon; solar absorber-convertors; solar cells; GaAsP-SiGe-Si; GaInP; device passivation layer; dual junction solar cells; graded buffer layer; single junction solar cells; tandem solar cell; window layer; MOCVD; Performance evaluation; Photovoltaic cells; Photovoltaic systems; Silicon; Silicon germanium; Substrates; III-V semiconductor materials; photovoltaic cells; semiconductor growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744974

Filename

6744974