Title :
The performance of nanocrystalline CuInS2/In2S3/SnO2 heterojunction solar cells prepared by chemical spray pyrolysis
Author :
Zhaoning Song ; Phillips, Adam B. ; Yao Xie ; Khanal, Rajendra R. ; Heben, Michael J.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
Abstract :
CuxIn2-xS3-x thin films with various compositions were prepared by chemical spray pyrolysis to investigate Cu-In-S chalcopyrite semiconductor materials for photovoltaic applications. Nanocrystalline grains with sizes ranging from 30 to 80 nm were identified from XRD and SEM measurements. The CuInS2/In2S3/SnO2 heterojunction was formed to study photovoltaic effects with the sprayed Cu-chalcopyrite thin films. Best results of η=1.32%, VOC=421 mV, JSC=5.35 mA/cm2 and FF=58.5% were found for solar cells with a Cu1.1In0.9S1.9 absorber layer. Through analysis of the film and device parameters, factors that limited the photovoltaic performance are identified and discussed.
Keywords :
III-VI semiconductors; IV-VI semiconductors; X-ray diffraction; copper compounds; indium compounds; nanostructured materials; pyrolysis; scanning electron microscopy; semiconductor thin films; solar cells; sulphur compounds; ternary semiconductors; CuInS2-In2S3-SnO2; SEM measurements; XRD measurements; absorber layer; chalcopyrite semiconductor materials; chemical spray pyrolysis; device parameters; nanocrystalline grains; nanocrystalline heterojunction solar cells; photovoltaic applications; photovoltaic performance; size 30 nm; size 80 nm; sprayed copper-chalcopyrite thin films; thin films; Chemicals; Films; Photonic band gap; Photovoltaic cells; Photovoltaic systems; chemical spray pyrolysis; copper indium disulfide; nanocrystalline; photovoltaic cells; solution-processed;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744992
