Title :
Nucleation-step study of silicon homoepitaxy for low-temperature fabrication of Si solar cells
Author :
Mosleh, Aboozar ; Ghetmiri, Seyed Amir ; Conley, Benjamin R. ; Abu-Safe, Husam ; Waqar, Zafar ; Benamara, M. ; Shui-Qing Yu ; Naseem, Hameed A.
Author_Institution :
Microelectron.-Photonics Program, Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
Smooth nucleation of silicon has been achieved as a critical step in epitaxial growth process using ultra high vacuum chemical vapor deposition system at 250°C. Proper conditions were achieved by studying the effect of key nucleation parameters such as plasma power, hydrogen dilution and deposition temperature. High-resolution transmission electron microscopy has been employed to study rough nucleation condition in order to achieve perfect nucleation step, which resulted in high quality epilayers.
Keywords :
chemical vapour deposition; elemental semiconductors; epitaxial growth; epitaxial layers; hydrogen; nucleation; silicon; solar cells; transmission electron microscopy; Si; deposition temperature; epitaxial growth; hydrogen dilution; low-temperature fabrication; rough nucleation; solar cells; temperature 250 degC; transmission electron microscopy; ultra high vacuum chemical vapor deposition; Plasma temperature; Rough surfaces; Silicon; Surface cleaning; Surface contamination; Surface roughness; crystalline materials; epitaxial layers; silicon;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6745017
