The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells

Author

Wei Zhang ; Chen Chen ; Rui Jia ; Janssen, G.J.M. ; Dai-Sheng Zhang ; Zhao Xing ; Bronsveld, Paula C. P. ; Weeber, Arthur W. ; Zhi Jin ; Xin-yu Liu

Author_Institution

Inst. of Microelectron., Beijing, China

fYear

2013

fDate

16-21 June 2013

Firstpage

2681

Lastpage

2684

Abstract

In the case of screen-printed aluminum alloyed p⁺ emitter (Al-p⁺) Interdigitated Back Contact (IBC) solar cells, the shunt path induced by non-uniformity and discontinuity of the Al-p⁺ emitter has been minimized by exact control of firing condition. PC2D simulation results show that reduction and elimination of shunt path on Al-p⁺ emitter can significantly enhance the photovoltaic properties especially the open-circuit voltage (V_oc). We use a multi-diode model to establish the relation between the Voc and the effective shunt resistance of the cell.

Keywords

aluminium alloys; solar cells; PC2D simulation; V_oc characteristics; firing condition; interdigitated back contact solar cells; multi-diode model; open-circuit voltage; photovoltaic properties; screen-printed aluminum alloyed p⁺ emitter; shunt path reduction; shunt resistance; Firing; Optimization; Photovoltaic cells; Photovoltaic systems; Resistance; Silicon; Al-p⁺ emitter; IBC; photovoltaic cells; silicon; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6745025

Filename

6745025