The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells

In the case of screen-printed aluminum alloyed p⁺ emitter (Al-p⁺) Interdigitated Back Contact (IBC) solar cells, the shunt path induced by non-uniformity and discontinuity of the Al-p⁺ emitter has been minimized by exact control of firing condition. PC2D simulation results show that reduction and elimination of shunt path on Al-p⁺ emitter can significantly enhance the photovoltaic properties especially the open-circuit voltage (V_oc). We use a multi-diode model to establish the relation between the Voc and the effective shunt resistance of the cell.