Characterization of high fluence irradiations on advanced triple junction solar cells

Author

Maximenko, S.I. ; Messenger, Scott R. ; Hoheisel, Raymond ; Scheiman, David ; Gonzalez, M. ; Lorentzen, J. ; Jenkins, Phillip P. ; Walters, R.J.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2013

fDate

16-21 June 2013

Firstpage

2797

Lastpage

2800

Abstract

Reported is the characterization of irradiated InGaP₂/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of radiation damage on the optoelectronic properties of each subcell in the monolithic triple junction structure and correlate them with the illuminated (AM0, 1 sun, 25°C) current-voltage (IV) and quantum efficiency (QE) characteristics.

Keywords

III-V semiconductors; cathodoluminescence; gallium arsenide; germanium; indium compounds; radiation effects; scanning electron microscopy; semiconductor junctions; solar cells; EBIC; InGaP₂-GaAs-Ge; SEM; advanced triple junction solar cells; cathodoluminescence imaging; cathodoluminescence spectroscopy; electron beam induced current modes; high fluence irradiations; monolithic triple junction structure; quantum efficiency; radiation damage; scanning electron microscopy; Degradation; Gallium arsenide; Indium gallium arsenide; Junctions; Photovoltaic cells; Radiation effects; Scanning electron microscopy; Multijunction solar cells; SEM; diffusion length; irradiation damage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6745053

Filename

6745053