DocumentCode
683358
Title
Outdoor exposure performance and degradation comparison on different modules fabricated by multicrystalline, monocrstalline and quasi-mono cells
Author
Shi-Kai Tzeng ; Chen-Hao Yang ; Wen-Pin Chen ; Chih-Hsyong Wu ; Her-Chang Ay
Author_Institution
Motech Ind., Inc., Tainan, Taiwan
fYear
2013
fDate
16-21 June 2013
Firstpage
3033
Lastpage
3035
Abstract
In this article, the performances of 60-cell module fabricated by Czochralski-silicon (Cz-Si), multicrytalline silicon (mc-Si) and quasi-mono silicon (QM-Si) solar cells were measured based on the CTM power losses and LID effects, besides, the influence of busbar (BB) number on the performance is also estimated. According to the experimental results, module fabricated by mc-Si cells revealed a CTM power loss ~2.33%. LID performances were estimated under outdoor exposure with accumulative total in 60 kWh/cm2, the mc-Si and QM-Si modules show smaller power degradation than Cz-Si due to the lower oxygen concentration residual in mc-Si and QM-Si wafer. These results can be used as a rational for design low-power-loss modules.
Keywords
crystal growth from melt; elemental semiconductors; semiconductor growth; silicon; solar cells; CTM power losses; LID effects; QM-Si module; Si; busbar; mc-Si module; module fabrication; monocrstalline solar cells; multicrystalline solar cell; outdoor exposure performance; power loss module design; quasi-mono solar cells; Degradation; Encapsulation; Loss measurement; Optical losses; Photovoltaic cells; Silicon; Cz-Si; cell-to-module power loss; light-induced degradation; mc-Si; quasi-mono Si;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6745100
Filename
6745100
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