Title :
Analysis of temperature-dependent current-voltage characteristics for CIGSSe and CZTSSe thin film solar cells from nanocrystal inks
Author :
Carter, Nathaniel J. ; Hages, Charles J. ; Moore, Jo Ellen ; McLeod, Steven M. ; Miskin, Caleb K. ; Joglekar, Chinmay ; Lundstrom, Mark S. ; Agrawal, Rajeev
Author_Institution :
Sch. of Chem. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Thin film solar cells with CIGSSe and CZTSSe absorber layers fabricated from nanocrystal inks represent economically scalable technologies for alternative sources of energy. Although these two materials share similar properties important to functioning as a photovoltaic absorber, lab scale CIGSSe devices have achieved power conversion efficiencies 1.5 to 2 times higher than their CZTSSe counterparts. In the current work, CIGSSe and CZTSSe devices similarly processed from nanocrystal inks and exhibiting efficiencies of 14.2% and 9.2%, respectively, are characterized by temperature-dependent current-voltage (IVT) analysis to reveal limitations to CZTSSe device performance compared to CIGSSe.
Keywords :
copper compounds; gallium compounds; indium compounds; nanoelectronics; nanostructured materials; semiconductor thin films; solar cells; sulphur compounds; thin film devices; tin compounds; zinc compounds; CIGSSe thin film solar cells; CZTSSe thin film solar cells; Cu(GaIn)Se2; Cu2ZnSn(S1-ySey)4; IVT; efficiency 14.2 percent; efficiency 9.2 percent; lab scale CIGSSe devices; nanocrystal inks; photovoltaic absorber; power conversion efficiency; temperature-dependent current-voltage analysis; temperature-dependent current-voltage characteristic analysis; Ink; Nanocrystals; Photovoltaic cells; Temperature; Temperature dependence; Temperature measurement; CIGSSe; CZTSSe; Thin film solar cells; current-voltage characteristics; inorganic compounds; nanocrystal inks;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6745107
