Title :
High fluence irradiations on triple junction solar cells
Author :
Messenger, Scott R. ; Hoheisel, Raymond ; Lorentzen, J. ; Scheiman, David ; Warner, Jeffrey H. ; Gonzalez, M. ; Jenkins, Phillip P.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
Abstract :
Triple junction GaInP/InGaAs/Ge solar cells were irradiated with 3 MeV protons to extreme fluences as high as 1015 p+/cm2. In this paper, IV and QE results will be presented and a model will be developed to explain the radiation behavior. A carrier removal damage mechanism is evident which actually aids in the radiation hardness of these devices.
Keywords :
III-V semiconductors; gallium arsenide; germanium; indium compounds; solar cells; wide band gap semiconductors; GaInP-InGaAs-Ge; carrier removal damage mechanism; electron volt energy 3 MeV; high fluence irradiations; radiation behavior; radiation hardness; triple junction solar cells; Current measurement; Degradation; Indium phosphide; Junctions; Photovoltaic cells; Protons; Radiation effects; displacement damage dose; multijunction solar cells; radiation effects;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6745120
