DocumentCode :
683393
Title :
Lifetime improvement for high efficiency Cu2ZnSnS4 submodules
Author :
Sugimoto, Hiroshi ; Liao, Chenglin ; Hiroi, Homare ; Sakai, Noriyuki ; Kato, Toshihiko
Author_Institution :
Solar Bus. Center, Showa Shell Sekiyu K.K., Atsugi, Japan
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
3208
Lastpage :
3211
Abstract :
Photoluminescence (PL) lifetime of 36 ns on Cu2ZnSnS4 absorber was achieved by optimizing absorber formation. The high quality absorber enabled us to achieve 9.2% efficiency Cu2ZnSnS4 submodule. Comparison between the PL lifetime and atomic composition showed lower Cu/Sn ratio resulted in longer lifetime. The lower Cu/Sn ratio made bandgap higher and voltage deficit lower. The PL intensity mapping accelerated the quality clarification of the various absorbers and contributed to the achievement of high efficiency Cu2ZnSnS4 submodules.
Keywords :
copper compounds; energy gap; photoluminescence; selenium compounds; solar cells; tin compounds; zinc compounds; Cu2ZnSnS4; PL intensity mapping; absorber formation; atomic composition; bandgap; photoluminescence; solar cells; submodules; Buffer layers; Measurement by laser beam; Photonic band gap; Photovoltaic cells; Sputtering; Tin; Uninterruptible power systems; CZTS; PL; lifetime; mapping; submodule;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6745135
Filename :
6745135
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=683393
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