DocumentCode :
683394
Title :
Role of electron and hole collecting buffer layers on the stability of inverted polymer: Fullerene photovoltaic devices
Author :
Voroshazi, Eszter ; Cardinaletti, Ilaria ; Uytterhoeven, Griet ; Hadipour, Afshin ; Rand, Barry P. ; Aernouts, Tom
Author_Institution :
imec, Leuven, Belgium
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
3212
Lastpage :
3215
Abstract :
Systematic device performance and air stability comparison of inverted architecture P3HT:PCBM cells with six different electron collecting layers (ECL) and two hole collecting layers are presented in this study. Regardless of the ECL, we achieved an efficiency of over 3.5% and lifetime of over 1000 h. These results prove the interchangeability of different ECLs (TiOx, ZnO and PFN). Over 5000 h long air exposure revealed a secondary failure of inverted cells. Notably, devices with PEDOT:PSS/Ag/Al electrode exhibited the longest lifetime of 4000 h compared to 3000 h with MoO3/Ag/Al.
Keywords :
electrochemical electrodes; organic semiconductors; polymers; solar cells; ECL; electron collecting layers; fullerene photovoltaic devices; hole collecting buffer layers; inverted cell secondary failure; inverted polymer stability; systematic device performance; Anodes; Degradation; Humidity; Performance evaluation; Stability criteria; Thermal stability; Degradation; Interface phenomena; Organic semiconductors; Oxygen; Photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6745136
Filename :
6745136
Link To Document :
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