Title :
Numerical simulation about effects of bandgap grading in Cu(In, Ga)Se2 with a bandgap of 1.4 eV on solar cell performance
Author :
Hirai, Yuki ; Suzuki, Ryo ; Kurokawa, Yusuke ; Yamada, Akimasa
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
The effects of bandgap grading in a Cu(In, Ga)Se2 thin film with the average bandgap of 1.4 eV on the performance of the solar cells were investigated by changing a minimum bandgap and its position employing wxAMPS. Considering minority carrier recombination at the CdS/CIGS interface, degradations of solar cell characteristics were observed. In this case, double graded band profile is required in order to suppress the recombination. However, considering also an ordered vacancy compound (OVC) at the interface, a high efficiency that is close to the case without interface recombination was obtained. These results indicate that the field effect passivation owing to OVC can suppress the interface recombination.
Keywords :
copper; energy gap; gallium; indium; minority carriers; numerical analysis; solar cells; Cu(Ga)Se2; Cu(In)Se2; OVC; bandgap grading; double graded band profile; electron volt energy 1.4 eV; field effect passivation; interface recombination suppression; minority carrier recombination; numerical simulation; ordered vacancy compound; solar cell performance; wxAMPS; Degradation; Electric fields; Numerical models; Passivation; Photonic band gap; Photovoltaic cells; Radiative recombination; Bandgap grading; CIGS; compound semiconductor; photovoltaic cells; simulation;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6745158
