Title :
Toward defining tolerances for structural defects in silicon through 2D and 3D device simulations
Author :
Needleman, David Berney ; Buonassisi, Tonio
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We present a Technology Computer Aided Design (TCAD) implementation of literature models for the recombination activity of extended structural defects in crystalline silicon (c-Si) using the software package Synopsys Sentaurus Device. The model is validated using literature and experimental electron beam-induced current (EBIC) data. This implementation could potentially be used to determine tolerances for these defects in various materials and device architectures.
Keywords :
CAD; EBIC; elemental semiconductors; extended defects; semiconductor devices; semiconductor growth; silicon; software packages; 2D device simulation; 3D device simulation; Si; TCAD; crystalline silicon; device architectures; electron beam-induced current data; extended structural defects; literature models; recombination activity; software package Synopsys Sentaurus Device; technology computer aided design; Computational modeling; Current measurement; Photovoltaic cells; Photovoltaic systems; Silicon; computer simulation; crystal microstructure; grain boundaries; photovoltaic cells; silicon;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6745165
