InP nanowire array solar cell with cleaned sidewalls

Author

Cui, Yan ; Plissard, S. ; Wang, Jiacheng ; Vu, T.T.T. ; Smalbrugge, E. ; Geluk, E.J. ; de Vries, T. ; Bolk, Jeroen ; Trainor, M. ; Verheijen, Marcel A. ; Haverkort, J.E.M. ; Bakkers, Erik P. A. M.

Author_Institution

Dept. of Appl. Phys., Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2013

fDate

16-21 June 2013

Firstpage

3389

Lastpage

3392

Abstract

We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ cleaned with a piranha etch. With this cleaning procedure, we could remove the sidewall extrusions and carbon contamination on the nanowire sidewall. We obtained a V_oc of 0.68V, a fill factor of 71%, a diode rectification ratio of 10⁷, an ideality factor of 2.12, a solar cell efficiency of 10.2% and a >90% device yield.

Keywords

contamination; gold; nanolithography; nanoparticles; nanowires; soft lithography; solar cells; InP; carbon contamination; cleaned sidewalls; diode rectification ratio; gold nanoparticles; nanoimprint lithography; nanowire array solar cell; p-n junction; sidewall extrusions; vapor-liquid-solid growth; Arrays; Carbon; Etching; Indium phosphide; Lighting; Photovoltaic cells; Substrates; III-V semiconductor materials; Indium Phosphide; Nanowires; photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6745176

Filename

6745176