Title :
Substrate-type Cu(In, Ga)Se2 solar cells with all layers deposited by non-vacuum solution-based methods
Author :
Nagino, Shinsuke ; Suzuki, Hajime ; Ueno, Satoshi
Author_Institution :
R&D Center, Dai Nippon Printing Co., Ltd. (DNP), Kashiwa, Japan
Abstract :
Cu(In, Ga)Se2 (CIGS) solar cells with all layers deposited using solution-based methods were demonstrated in order to investigate the utilization of wet process in CIGS photovoltaic cell fabrication. An active area efficiency of 7.7% was obtained. On the other hand, the highest efficiency of the cells with solution-processed CIGS and CdS layers was 15.3 %, which was about twice higher than that of all wet-coated cells. It was revealed that the quality of the ZnO nanoparticle layer, a lack of Na in the CIGS layer and the sheet resistance of SnO2:F back electrode limited the cell performance.
Keywords :
II-VI semiconductors; cadmium compounds; electrodes; fluorine; solar cells; tin compounds; zinc compounds; CdS; SnO2:F; ZnO; back electrode; nanoparticle layer; nonvacuum solution-based methods; photovoltaic cell fabrication; substrate-type solar cells; wet-coated cells; Electrodes; Films; Photovoltaic cells; Photovoltaic systems; Resistance; Substrates; Zinc oxide; Ag nanowire; Cu(In, Ga)Se2; ZnO nanoparticle; non-vacuum wet process;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6745194
