• DocumentCode
    683613
  • Title

    A new copper wire ball bonding process methodology

  • Author

    Farrugia, Mark Luke

  • Author_Institution
    NXP Semicond., Package Innovation Nijmegen, Nijmegen, Netherlands
  • fYear
    2013
  • fDate
    11-13 Dec. 2013
  • Firstpage
    168
  • Lastpage
    172
  • Abstract
    Copper wire bonding as a replacement to the long established gold wire process has gained significant momentum in the last years. Wire bonding specialists have struggled with copper´s mechanical, physical and chemical differences to gold, in developing robust processes that are able to maintain similar yield, output and quality levels of gold wire bonded products. This article shows the results obtained in a new wire bonding process concept, in terms of key requirements that are used to guard Cu wire bonded products against the two most common failures in such products: Inter-Metallic Compound (IMC) corrosion and bond pad cratering damage. The new process concept is compared, in terms of the same metrics, to the more traditionally used Double Load [1,2] process principle commonly used for Cu wire processes.
  • Keywords
    copper alloys; lead bonding; Cu; IMC corrosion; bond pad cratering damage; chemical differences; double load process principle; intermetallic compound corrosion; mechanical differences; physical differences; wire ball bonding process methodology; wire bonded products; Bonding; Copper; Corrosion; Etching; Robustness; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-2832-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2013.6745706
  • Filename
    6745706