DocumentCode
683613
Title
A new copper wire ball bonding process methodology
Author
Farrugia, Mark Luke
Author_Institution
NXP Semicond., Package Innovation Nijmegen, Nijmegen, Netherlands
fYear
2013
fDate
11-13 Dec. 2013
Firstpage
168
Lastpage
172
Abstract
Copper wire bonding as a replacement to the long established gold wire process has gained significant momentum in the last years. Wire bonding specialists have struggled with copper´s mechanical, physical and chemical differences to gold, in developing robust processes that are able to maintain similar yield, output and quality levels of gold wire bonded products. This article shows the results obtained in a new wire bonding process concept, in terms of key requirements that are used to guard Cu wire bonded products against the two most common failures in such products: Inter-Metallic Compound (IMC) corrosion and bond pad cratering damage. The new process concept is compared, in terms of the same metrics, to the more traditionally used Double Load [1,2] process principle commonly used for Cu wire processes.
Keywords
copper alloys; lead bonding; Cu; IMC corrosion; bond pad cratering damage; chemical differences; double load process principle; intermetallic compound corrosion; mechanical differences; physical differences; wire ball bonding process methodology; wire bonded products; Bonding; Copper; Corrosion; Etching; Robustness; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
Conference_Location
Singapore
Print_ISBN
978-1-4799-2832-3
Type
conf
DOI
10.1109/EPTC.2013.6745706
Filename
6745706
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