Analytical interconnect modeling based on equivalent circuit method

This paper presents an analytical modeling method for interconnect. The lumped element model is based on the cascade of “pi” sections, and all the parameters are extracted from the physical equations. These equations are only relevant with technological and geometric parameters, so the model is scalable with this two factors. High frequency effect and thick metal effect are considered, so the model is accurate at high frequency and can be used for interconnect in both IC and interposer. The model is generated by these equations directly; no further fitting or optimization is required. The model is validated on two different CMOS 65nm technology. A good agreement between model and measurement or simulation is shown.