• DocumentCode
    684444
  • Title

    Forming a regular domain structures at 127° Y′-cut of a LiTaO3 crystal by using direct e-beam writing

  • Author

    Emelin, Evgeny ; Roshchupkin, Dmitry ; Lavrov, Sergey ; Ilyin, Nikita ; Kudryavtsev, Anatoly

  • Author_Institution
    Inst. of Microelectron. Technol. & High-Purity Mater., Chernogolovka, Russia
  • fYear
    2013
  • fDate
    21-25 July 2013
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    Regular domain structures were formed at the 127° Y´-cut of a LiTaO3 crystal by direct e-beam writing. The study of regular domain structures was carried out by selective chemical etching method and by nonlinear optics methods. The domain lines consists of single triangular domains merged together (base-to-apex). The domain distribution inside the LiTaO3 127° Y´-cut occurs at the angle 37° to the irradiated surface and exhibits a distinct anisotropy in the crystallographic directions. Depending on the direction of e-beam movement along the irradiated surface, the threshold density of the introduced charge necessary for the inversion of the crystal spontaneous polarization changes by an order of magnitude.
  • Keywords
    dielectric polarisation; electric domains; electron beam effects; etching; lithium compounds; LiTaO3; chemical etching method; crystal spontaneous polarization; crystallographic directions; direct e-beam writing; domain structures; nonlinear optics; threshold density; triangular domains; Chemicals; Detectors; Hafnium; Integrated optics; Joints; Optical polarization; Optical pumping; LiTaO3; direct e-beam writing; regular domain structures; spontaneous polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
  • Conference_Location
    Prague
  • Type

    conf

  • DOI
    10.1109/ISAF.2013.6748688
  • Filename
    6748688