DocumentCode
684444
Title
Forming a regular domain structures at 127° Y′-cut of a LiTaO3 crystal by using direct e-beam writing
Author
Emelin, Evgeny ; Roshchupkin, Dmitry ; Lavrov, Sergey ; Ilyin, Nikita ; Kudryavtsev, Anatoly
Author_Institution
Inst. of Microelectron. Technol. & High-Purity Mater., Chernogolovka, Russia
fYear
2013
fDate
21-25 July 2013
Firstpage
17
Lastpage
20
Abstract
Regular domain structures were formed at the 127° Y´-cut of a LiTaO3 crystal by direct e-beam writing. The study of regular domain structures was carried out by selective chemical etching method and by nonlinear optics methods. The domain lines consists of single triangular domains merged together (base-to-apex). The domain distribution inside the LiTaO3 127° Y´-cut occurs at the angle 37° to the irradiated surface and exhibits a distinct anisotropy in the crystallographic directions. Depending on the direction of e-beam movement along the irradiated surface, the threshold density of the introduced charge necessary for the inversion of the crystal spontaneous polarization changes by an order of magnitude.
Keywords
dielectric polarisation; electric domains; electron beam effects; etching; lithium compounds; LiTaO3; chemical etching method; crystal spontaneous polarization; crystallographic directions; direct e-beam writing; domain structures; nonlinear optics; threshold density; triangular domains; Chemicals; Detectors; Hafnium; Integrated optics; Joints; Optical polarization; Optical pumping; LiTaO3 ; direct e-beam writing; regular domain structures; spontaneous polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
Conference_Location
Prague
Type
conf
DOI
10.1109/ISAF.2013.6748688
Filename
6748688
Link To Document